About

The Instituto de Ciencia de Materiales de Madrid (ICMM) is an institute of the Consejo Superior de Investigaciones Cientificas (CSIC) (Spanish National Research Council) founded in December 1986, that belongs to the Area of Science and Technology of Materials, one of the eight Areas in which the CSIC divides its research activities.

 

Our mission is to create new fundamental and applied knowledge in materials of high technological impact, their processing and their transfer to the productive sectors at local, national and European scales (the true value of materials is in their use), the training of new professionals, and the dissemination of the scientific knowledge.

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Forthcoming Events

SEP25/12:00

Líquidos Iónicos en Tribología e Ingeniería de Superficies
María Dolores Bermúdez Olivares  read more

SEP28/12:00

Polaritons for Chemistry and Materials Science

Francisco J. Garcia-Vidal  read more

OCT18/12:00

The role of light in the field of Spintronics
Rubén M. Otxoa de Zuazola  read more

News

Entrevista a Pablo San José, ICMM, sobre los ordenadores cuánticos. La 2 Noticias.

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"Theory of 2D crystals: graphene and beyond", artículo de portada en Chem. Soc. Rev., por Rafael Roldán y Pablo San José, ICMM, et al.

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Strong Room Temperature Blue Emission from Rapid Thermal Annealed Cerium-Doped Aluminum (Oxy)Nitride Thin Films

Alaa E. Giba, Philippe Pigeat, Stéphanie Bruyere, Hervé Rinnert, Flavio Soldera, Franck Mücklich, Raul Gago and David Horwat

Cerium-doped aluminum nitride (Ce-AlN) thin films were prepared at room temperature (RT) using radio frequency (RF) reactive sputtering. As-deposited samples were then subjected to rapid thermal annealing (RTA). X-ray diffraction and high resolution transmission electron microscopy (HRTEM) revealed a well crystalline textured microstructure with single [002] out-of-plane orientation in both as-deposited and annealed samples. Strong RT blue emission from post-annealed samples was detected under optical excitation either by 325 or 266 nm cw lasers. Electron energy loss spectroscopy (EELS) measurements at the Ce edges reveal the dominant oxidation state of Ce atoms, which undergoes a change from of Ce4+ to Ce3+ ions after RTA annealing in Ar atmosphere. The chemical composition was analyzed by Rutherford backscattering spectrometry (RBS) and contrasted to HRTEM images. Our findings indicate that the surface oxidation during the post-deposition annealing in Ar plays an important role in the PL response by changing the oxidation state of Ce ions from optically inactive ions (Ce4+) to the optically active ones (Ce3+). Moreover, the importance of this oxidation is further confirmed by the excitation mechanisms responsible for the blue emission determined by PL excitation measurements.

ACS Photonics, 2017

TEM images and corresponding SAED patterns for undoped AlN (a, b), CeAlN_As (c, d), CeAlN_FG (e, f), and CeAlN_Ar (g, h). Inset of g: Magnification on a part of top layer of CeAlN_Ar sample.

Publications Highlights

ICMM-2017 - Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain. Tel: +34 91 334 9000. info@icmm.csic.es