The Instituto de Ciencia de Materiales de Madrid (ICMM) is an institute of the Consejo Superior de Investigaciones Cientificas (CSIC) (Spanish National Research Council) founded in December 1986, that belongs to the Area of Science and Technology of Materials, one of the eight Areas in which the CSIC divides its research activities.
Our mission is to create new fundamental and applied knowledge in materials of high technological impact, their processing and their transfer to the productive sectors at local, national and European scales (the true value of materials is in their use), the training of new professionals, and the dissemination of the scientific knowledge.
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¿Contar la Ciencia a Profanos?
Por qué, Cómo y un Ejemplo. Dr. Joaquín Sevilla Moróder read more
THEORETICAL SIMULATIONS OF CARBON NANOSTRUCTURES: ENDOHEDRAL AND EXOHEDRAL FULLERENES Manuel Alcamí read more
Fermi velocity renormalization of graphene (RELOADED) Tobias Stauber read more
Premio Nacional de la Academia de Ciencias de Cuba 2016. Colaboración del ICMM, Eduardo Ruiz-Hitzky y Pilar Aranda
Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions
G. Sanchez-Santolino, J. Tornos, D. Hernandez-Martin, J. I. Beltran, C. Munuera, M. Cabero, A. Perez-Muñoz, J. Ricote, F. Mompean, M.Garcia-Hernandez, Z. Sefrioui, C. Leon, S. J. Pennycook, M.Carmen Muñoz, M. Varela and J. Santamaria
The peculiar features of domain walls observed in ferroelectrics make them promising active elements for next-generation non-volatile memories, logic gates and energy-harvesting devices. Although extensive research activity has been devoted recently to making full use of this technological potential, concrete realizations of working nanodevices exploiting these functional properties are yet to be demonstrated. Here, we fabricate a multiferroic tunnel junction based on ferromagnetic La0.7Sr0.3MnO3 electrodes separated by an ultrathin ferroelectric BaTiO3 tunnel barrier, where a head-to-head domain wall is constrained. An electron gas stabilized by oxygen vacancies is confined within the domain wall, displaying discrete quantum-well energy levels. These states assist resonant electron tunnelling processes across the barrier, leading to strong quantum oscillations of the electrical conductance.
a, Sketch of the sample structure for perpendicular transport measurements. b, Tunnelling current as a function of applied bias measured at 14 K for parallel (P, blue curve) and antiparallel (AP, red curve) alignment of the magnetic moments of the electrodes. c, Junction resistance versus applied magnetic field sweeping from 4,000 Oe to 4,000 Oe (blue) and from 4,000 Oe to 4,000Oe (red) at 14 K, measured at 800 mV. d–h, Differential conductance obtained as the numerical derivative of the current versus voltage for parallel (blue curve) and antiparallel (red curve) magnetic states at 14 K (d), 40 K (e), 60 K (f), 80 K (g) and 100 K (h).