A simple means of producing highly transparent graphene on sapphire using chemical vapor deposition on a copper catalyst
Gloria Anemone, Esteban Climent-Pascual, Amjad Al Taleb, Hak Ki Yu, Felix Jiménez-Villacorta, Carlos Prieto, Alec M. Wodtke, Alicia De Andrés, and Daniel Farías
Chemical vapor deposition (CVD) is one of the best ways to scalably grow low cost, high quality graphene on metal substrates; unfortunately, it not ideal for producing graphene on dielectric substrates. Here, we demontrate production of a high quality graphene layer on Sapphire using CVD with a copper catalyst. The catalyst consists of a thin copper film grown epitaxially on α- (0001). After CVD growth of Graphene, the copper can be removed by simple evaporation in the presence of a carbon source (). We characterized the resulting graphene layer using Raman spectroscopy, atomic force microscopy (AFM), optical transmission and helium atom scattering (HAS). The sample exhibited a reduced Raman D peak and an excellent 2D to G ratio. AFM and HAS show large graphene domains over a macroscopic region. We measured % transparency over the visible spectrum.